Thin-film transistor substrate, display panel, and display device

ABSTRACT

A thin-film transistor substrate includes a thin-film transistor and a light-shielding part. The thin-film transistor includes a gate electrode, a semiconductor part made from a semiconductor material and superimposed on a part of the gate electrode via a first insulating film, a source electrode on a part of the semiconductor part and connected to the semiconductor part, and a drain electrode on a part of the semiconductor part and connected to the semiconductor part with spaced apart from the source electrode. The light-shielding part includes a first light-shielding section disposed above the semiconductor part, the source electrode, and the drain electrode via the second insulating film and superimposed on the semiconductor part, and a second light-shielding section not to be superimposed on the gate electrode, the source electrode, and the drain electrode and having an opening adjacent to the thin-film transistor.

TECHNICAL FIELD

The present invention relates to a thin film transistor substrate, adisplay panel, and a display device.

BACKGROUND ART

Examples of currently-known liquid crystal di-play devices include onedescribed in Patent Literature 1 as under. The liquid crystal displaydevice described in Patent Literature 1 is provided with a thin-filmtransistor substrate. The thin-film transistor substrate has a storageelectrode made from a conductive material for shielding light. Thestorage electrode completely shields a data line from a pixel electrodeas well as a gate line from a pixel electrode to increase an apertureratio and to prevent a cross talk for eliminating declination of aliquid crystal. Accordingly, an improved image quality is obtainable.

RELATED ART DOCUMENT Patent Document

Patent Literature 1

Japanese Unexamined Patent Application Publication No.

Problem to be Solved by the Invention

The storage electrode of the thin-film transistor substrate described inPatent Literature 1 as above is made from a conductive material thatshields light. For instance, the material specifically adopts a metallicmaterial. When the storage electrode is formed with the metallicmaterial, a light shielding effect is obtainable mainly by reflectinglight on a surface of the storage electrode. On the other hand, lightreflected on the surface of the storage electrode is applied to anactive layer composed of a semiconductor material in the thin-filmtransistor, properties of the thin-film transistor may be affectedadversely.

DISCLOSURE OF THE PRESENT INVENTION

The technology described herein was made in view of the abovecircumstances. An object is to suppress application of light to asemiconductor part.

Means for Solving the Problem

An embodiment of the present invention includes a thin-film transistorand a light-shielding part. The thin-film transistor at least includes agate electrode, a semiconductor part, a source electrode, and a drainelectrode. The semiconductor part is made from a semiconductor material,and is configured to be superimposed on at least a part of the gateelectrode via a first insulating film on an upper layer side. The sourceelectrode is disposed on at least a part of the semiconductor part on anupper layer side, and is configured to be connected to the semiconductorpart. The drain electrode is disposed on at least a part of thesemiconductor part on an upper layer side, and is configured to beconnected to the semiconductor part while being spaced apart from thesource electrode. The light-shielding part is disposed on an upper layerside with respect to the semiconductor part, the source electrode, andthe drain electrode via a second insulating film. The light-shieldingpart at least includes a first light-shielding section and a secondlight-shielding section. The first light-shielding section is disposedon an upper layer side with respect to the semiconductor part, thesource electrode, and the drain electrode via a second insulating film,and is configured to be superimposed on the semiconductor part. Thesecond light-shielding section is configured not to be superimposed onthe gate electrode, the source electrode, and the drain electrode, andhas an opening adjacent to the thin-film transistor.

With such a configuration as above, if a signal is applied to the gateelectrode and the source electrode individually that form the thin-filmtransistor, current flows between the source electrode and the drainelectrode via the semiconductor part made from the semiconductormaterial. The light-shielding part includes the first light-shieldingsection that is disposed on the upper layer side with respect to thesemiconductor part via the second insulating film and is configured tobe superimposed on the semiconductor part. The first light-shieldingsection allows shielding of external light applied from the upper layerside to the semiconductor part made from the semiconductor material,leading to suppressed application of light to the semiconductor part. Incontrast to this, if external light is applied from a lower layer sidewith respect to the gate electrode, source electrode, and the drainelectrode, it is assumed that external light that is incapable of beingshielded by the gate electrode, the source electrode, and the drainelectrode is reflected by the first light-shieldng section. Under suchan assumption, reflected light may directly applied to the semiconductorpart. Alternatively, the reflected light may be multiply reflectedbetween the gate electrode and the light-shielding part, leading toapplication of the light to the semiconductor part. With regarding tothis, the light-shielding part includes the second light-shieldingsection not superimposed on the gate electrode, the source electrode,and the drain electrode, and the second light-shielding section includesan opening adjacent to the thin-film transistor. Accordingly, theexternal light applied from the lower layer side with respect to thegate electrode, the source electrode, and the drain electrode and notshielded by the gate electrode, the source electrode, and the drainelectrode is likely to pass through the opening of the secondlight-shielding section easily, and is unlikely to contact the firstlight-shielding section from the lower layer side. This causesdifficulty in generation of the light reflected from the firstlight-shielding section, leading to suppressed application of the lightto the semiconductor part the above, a variation in property of thethin-film transistor in association with the application of the light tothe semiconductor part, especially a leak current that may be generatedin the thin-film transistor in an off state can be decreased.

The following configuration is preferred for the embodiment of thepresent invention.

(1) The gate electrode may include a first gate electrode componentwhere the source electrode and the drain electrode are superimposed, anda second gate electrode component where the source electrode and thedrain electrode are not superimposed. The second light-shielding sectionincludes the opening arranged adjacent to the second gate electrodecomponent. With such a configuration, the external light applied fromthe lower layer side adjacent to the first gate electrode component ofthe gate electrode is shielded by the source electrode or the drainelectrode if the source electrode or the drain electrode is protrudedfrom the gate electrode. If the external light is reflected on the firstlight-shielding section, light reflected is likely to contact the sourceelectrode or the drain electrode on the upper layer side with respect tothe semiconductor part, whereas light reflected is unlikely to contactthe semiconductor part. In contrast to this, if external light appliedfrom the lower layer side adjacent to the second gate electrodecomponent of the gate electrode is reflected on the first lightshielding section, light reflected may possibly contact a region of thesemiconductor part on the upper layer side where neither the sourceelectrode nor the drain electrode is arranged. In contrast to this,since t the second light-shielding section has the openings that aredisposed adjacent to the second gate electrode component, external lightreflected adjacent to the second gate electrode component from the lowerlayer side is likely to pass through the opening of the secondlight-shielding section, and thus is likely to be reflected on the firstlight-shielding section. This enables suppressed irradiation of light tothe semiconductor part.

(2) The light-shielding part may include an extended opening in at leasta part of a region superimposed on the second gate electrode component,the extended opening being in communication with the opening. With sucha configuration, the external light applied adjacent to the second gateelectrode component from the lower layer side, especially obliqueexternal light, passes through the opening of the second light-shieldingsection and the extended opening in communication therewith. This causesmore difficulty in reflection of the external light on the firstlight-shielding section. This enables more suppressed application of thelight to the semiconductor part.

(3) The light-shielding part may include an extended light-shieldingpart configured not to be superimposed on the semiconductor part but tobe superimposed on the gate electrode and to be connected to the firstlight-shielding section. With such a configuration, the extendedlight-shielding part connected to the first light-shielding sectionallows more suitable shielding of the external light applied to thesemiconductor part from the upper layer side, leading to more suppressedapplication of light to the semiconductor part.

(4) The thin-film transistor substrate may further include a pixelelectrode disposed on the light-shielding part via a third insulatingfilm on an upper layer side and configured to be connected to the drainelectrode. The pixel electrode may at least include a first pixelelectrode component that is not superimposed on the thin-filmtransistor, and a second pixel electrode component that is superimposedon at least a part of the thin-film transistor. The light-shielding partmay include a pixel light-shielding portion that is opened such that thesecond light-shielding section surrounds the first pixel electrodecomponent and is made from a conductive material. The pixel electrodemay be arranged such that the second pixel electrode component ispartially superimposed on at least apart of the first light-shieldingsection. With such a configuration as above, the pixel electrode ischarged in response to flow of a current between the source electrodeand the drain electrode via the semiconductor part. Since thelight-shielding part includes the light-shielding part that is openedsuch that the second light-shielding section surrounds the first pixelelectrode component, light passing through the opening is able to bedeflected toward the pixel electrode. The light-shielding part disposedon the light-shielding part via the third insulating film on the upperlayer side includes the second pixel electrode component a part of whichis superimposed on at least a part of the first light-shielding sectionof the light-shielding part made from a conductive material. This formselectrostatic capacity between the pixel electrode and the firstlight-shielding section. Accordingly, if the thin-film transistor is inan off state, such a state is suitable for keeping voltage charged inthe pixel electrode. This allows prevention of visible defects such aslowered contrast and display unevenness. Moreover, the light-shieldingpart achieves electric field shielding between lines connected to thegate electrode or the source electrode and the pixel electrode. Thisleads to difficulty in formation of parasitic capacitance by the pixelelectrode. Moreover, if the thin-film transistor substrate controlsorientation of liquid crystal molecules, disturbed orientation of theliquid crystal molecules such as reverse tilt is obtainable.

(5) The pixel electrode may include an opening superimposed partdisposed such that the second pixel electrode component s superimposedon the opening of the second light-shielding section. With such aconfiguration, the second pixel electrode component of the pixelelectrode includes the opening superimposed part configured to besuperimposed on the opening of the second light-shielding section, lightpassing through the opening of the second light-shielding section isavailable effectively with an electric field based on the voltagecharged in the pixel electrode containing the opening superimposed part.Moreover, the pixel electrode is capable of shielding the electric fieldat the opening of the second light-shielding section entirely that isgenerated from the lines connected to the gate electrode or the sourceelectrode to the pixel electrode. Accordingly, if the thin-filmtransistor substrate controls orientation of the liquid crystalmolecules, disturbed orientation of the liquid crystal molecules such asreverse tilt is avoidable.

(6) The gate electrode may include paired ends that form opposite sides.The paired ends may not be superimposed on the source electrode and thedrain electrode, whereas the light-shielding part may include pairedopenings in such a manner that the second light-shielding section isarranged adjacent to the paired ends. The pixel electrodes may bedisposed at least in pair so as to be arranged opposite to thesemiconductor part with respect to the paired openings in the secondlight-shielding section. The pixel electrodes in the pair may bearranged such that the opening superimposed part of the second pixelelectrode components is superimposed on the paired openings of thesecond light-shielding section. With such a configuration, a part of thegate electrode adjacent to the paired ends is opened. Accordingly, theexternal light applied to the gate electrode from the lower layer sideand is not shielded with the gate electrode is unlikely to pass throughthe paired openings of the second light-shielding section, leading tomore difficulty in contact to the first light-shielding section from thelower layer side. In addition, the opening superimposed parts of thesecond pixel electrode component that forms the paired pixel electrodesare superimposed on the paired openings in the second light-shieldingsection. Accordingly, the light passing through the paired openings ofthe second light-shielding section is available effectively with anelectric field based on the voltage charged in the paired pixelelectrodes. Moreover, the pixel electrode is capable of shielding theelectric field at the opening of the second light-shielding sectionentirely that is generated from the lines connected to the gateelectrode or the source electrode to the pixel electrode. Accordingly,if the thin-film transistor substrate controls orientation of the liquidcrystal molecules, disturbed orientation of the liquid crystal moleculessuch as reverse tilt is avoidable.

(7) The light-shielding part may include the second light-shieldingsection having at least the pixel light-shielding portions in pair, andat least one of the paired openings in the second light-shieldingsection is in communication with one of the paired openings of the pixellight-shielding portions adjacent thereto. Such a configuration obtainsan enlarged open range of the light-shielding part, leading to easypatterning of the light-shielding part.

(8) The thin-film transistor substrate may further include a commonelectrode disposed between the light-shielding part and the thirdinsulating film or between the light-shielding part and the secondinsulating film, and configured to be superimposed on at least the firstpixel electrode component of the pixel electrode. The common electrodemay include a common electrode-side opened superimposed part configuredto be superimposed on the opening superimposed part. With such aconfiguration, an electrostatic capacity is generated between the firstpixel electrode component of the pixel electrode and the commonelectrode adjacent to each other via the second insulating film or thethird insulating film, achieving maintained voltage charged in the pixelelectrode. With such a configuration, the common electrode includes thecommon electrode-side opened superimposed part configured to besuperimposed on the opening superimposed part of the second pixelelectrode, an electrostatic capacity is generated between the pixelelectrode and the common electrode also in the opening where nolight-shielding part is formed. This is more suitable for maintainingthe voltage charged in the pixel electrode. Moreover, the commonelectrode-side opened superimposed part achieves electric fieldshielding of the pixel electrode at the opening of the light-shieldingpart, leasing to easy formation of paras parasitic capacitance by thepixel electrode.

(9) The pixel light-shielding portion of the light-shielding part may bepartially superimposed on an outer edge of the pixel electrode. Withsuch a configuration, an electrostatic capacity becomes larger betweenthe pixel electrode and the light-shielding part, which is suitable formaintaining the voltage charged in the pixel electrode.

(10) The thin-film transistor substrate may further include a pixelelectrode configured to be connected to the drain electrode via contactholes, and disposed on the light-shielding part via the third insulatingfilm on the upper layer side. The contact holes may have openings at aposition where the second insulating film, the light-shielding part, andthe third insulating film may be superimposed on the drain electrodepartially. The openings of the light-shielding parts may be incommunication with the contact hole. Such a configuration obtains anenlarged open range of the light-shielding part, leading to easypatterning of the light-shielding part.

The display panel according to the present invention includes thethin-film transistor substrate described above, and an oppositesubstrate whose plate surface is faced to a plate surface of thethin-film transistor substrate. With the display panel configured insuch a manner as above, variation in property of the thin-filmtransistor is suppressed, achieving satisfied display quality.

The display device according to the present invention includes thedisplay panel described above, and an lighting device faced to theopposite substrate across the thin-film transistor substrate, andconfigured to apply light to the display panel. With the display deviceconfigured in such a manner as above, when the light from the lightingdevice is applied to the thin-film transistor substrate, the light isapplied from the lower layer side with respect to the light-shieldingpart of the thin-film transistor substrate, but the light is transmittedthrough the opening of the second light-shielding section. Accordingly,the light is unlikely to be applied to the first light-shielding sectionfrom the lower layer side. This causes difficulty in generation of thelight reflected from the first light-shielding section to thesemiconductor part, leading to suppressed variation in property of thethin-film transistor. Consequently, satisfied display quality isobtainable.

Advantageous Effect of the Invention

According to the present invention, the semiconductor part is lesslikely to be supplied with light.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view illustrating a sectionalconfiguration of a liquid crystal panel according to a first embodimentof the present invention.

FIG. 2 is a plan view of wiring in a display region of an arraysubstrate that forms the liquid crystal panel.

FIG. 3 is a plan view of a display region in a CF substrate that formsthe liquid crystal panel.

FIG. 4 is an enlarged plan view around a TFT in the display region ofthe array substrate.

FIG. 5 is a sectional view along an A-A line of FIG. 4.

FIG. 6 is a sectional view along a B-B line of FIG. 4.

FIG. 7 is a schematic sectional view illustrating a sectionalconfiguration of a liquid crystal panel according to a second embodimentof the present invention.

FIG. 8 is a plan view of wiring in a display region of an arraysubstrate that forms the liquid crystal panel.

FIG. 9 is an enlarged plan view around a TFT in the display region ofthe array substrate.

FIG. 10 is an enlarged plan view around a TFT in a display region of anarray substrate that forms a liquid crystal panel according to a thirdembodiment of the present invention.

FIG. 11 is a sectional view along an A-A line of FIG. 10.

FIG. 12 is a sectional view along a B-B line of FIG. 10.

MODES FOR CARRYING OUT THE INVENTION First Embodiment

The following describes a first embodiment of the present invention withFIGS. 1 to 6. The present embodiment exemplarily describes a liquidcrystal display device 10 provided with a liquid crystal panel (displaypanel) 11. Note that each of drawings partially indicates an X-axis, aY-axis, and a Z-axis, each of which corresponds to the direction wherethe drawing is illustrated.

As illustrated in FIG. 1, the liquid crystal display device 10 includesat least a liquid crystal panel 11 capable of displaying an image, and aback light device (lighting device) 12 disposed on a backside of theliquid crystal panel 11 and supply light for display to the liquidcrystal panel 11. The following describes a configuration of the liquidcrystal panel 11 in detail. It should be noted that FIG. 1 schematicallyillustrates the back light device 12 by chain double-dashed lines.

As illustrated in FIG. 1, the liquid crystal panel 11 includes pairedtransparent (excellent translucent) substrate 11 a, 11 b, and a liquidcrystal layer 11 c disposed between both the substrates 11 a, 11 b, andcontain liquid crystal molecules of a material whose optical property isvariable in association with electric field application. The substrates11 a, 11 b are sealed each other via a sealant, not shown, with amaintained cell gap by a thickness of the liquid crystal layer 11 c.Both the substrates 11 a, 11 b each include a glass substrate GS that issubstantially transparent on which a plurality of films is laminatedwith a known photo lithography technology. A surface side (opposite to aside adjacent to the back light device 12) of the substrates 11 a, 11 bis referred to as a CF substrate (opposite substrate) 11 a, whereas arear side (the side adjacent to the back light device 12) thereof isreferred to as an array substrate (thin-film transistor substrate,active matrix substrate) 11 b. Polarizers 11 d, 11 e adhere to outerfaces of the substrates 11 a, 11 b, respectively. The liquid crystalpanel 11 according to the first embodiment operates in a twisted nematic(TN) mode and in a normally white mode. In the normally white mode, theliquid crystal panel 11 is displayed in white when no voltage is appliedto the liquid crystal layer 11 c and light has the maximumtransmittance. Moreover, the liquid crystal panel 11 is divided into anactive area AA at a center portion of a screen where an image isdisplayed, and a non-active area NAA at an outer periphery of thescreen. The non-active area NAA is configured to surround the activearea AA in a frame shape and no image is displayed thereon. In addition,both the substrates 11 a, 11 b have innermost faces contacting theliquid crystal layer On the innermost face, alignment films 11 o, 11 pare formed, respectively, for orientation of the liquid crystalmolecules contained in the liquid crystal layer 11 c.

As illustrated in FIG. 2, multiple TFTs (thin-film transistors,switching elements) 11 f and multiple pixel electrodes 11 g are arrangedin a matrix array (in a row and column manner) on an inner side(adjacent to the liquid crystal layer 11 c, adjacent to the oppositeface of the CF substrate 11 a) of the array substrate 11 b in an X-axisdirection and a Y-axis direction. In addition, gate lines (scanninglines) 11 i and source lines (data lines, signal lines) 11 j arearranged so as to surround the TFTs 11 f and the pixel electrodes 11 gin a grid shape. The gate lines 11 i extend in the X-axis direction,whereas the source lines 11 j extend in the Y-axis direction. The gatelines 11 i and the source lines 11 j are connected to gate electrodes 11f 1 and source electrodes 11 f 2 of the TFTs 11 f, respectively. Thepixel electrodes 11 g are connected to drain electrodes 11 f 3 of theTFTs 11 f. Moreover, the TFTs 11 f are driven in accordance with varioussignals supplied to the gate lines 11 i and the source lines 11 j.Supply of electric potential to the pixel electrodes 11 g is controlledin association with the drive. The pixel electrodes 11 g are eachrectangular in a vertical direction in plan view. The pixel electrodes11 g each have a long side along the Y-axis direction, and a short sidealong the X-axis direction.

As illustrated in FIG. 3, the active area AA of the CF substrate 11 aincludes an inner side where color filters 11 k with three colors of red(R) , green (G), and blue (B) are provided. Multiple color filters 11 kwith different colors are arranged along the X-axis direction, andmultiple color filters 11 k with the same color are arranged along theY-axis direction, thereby being arranged generally in a matrix array.Each of the color filters 11 k are superimposed on each of the pixelelectrodes 11 g adjacent to the array substrate 11 b in plan view. Theliquid crystal panel 11 includes the color filters 11 k with the colorsof R, G, B that are arranged in line in the X-axis direction, and threepixel electrodes 11 g opposite to the color filters 11 k. The colorfilters 11 k and the pixel electrodes 11 g are each paired to form onepixel part PX as a display unit. The pixel part PX is composed of threeunit pixels indicating colors of R, G, B individually. An inter-pixellight-shielding part (black matrix) 111 is provided between adjacentcolor filters 11 k. The inter-pixel light-shielding part 111 functionsto prevent crossing of light between adjacent pixel parts PX to ensureindependency of gradation. In particular, a portion of the inter-pixellight-shielding part 111 extending in the Y-axis direction achievesprevention of color mixture among the pixel parts PX with differentcolors. The inter-pixel light-shielding part 111 is superimposed on thegate lines 11 i and the sourcelines 11 j in plan view. The inter-pixellight-shielding part 111 may be made from a metallic material. From theviewpoint of suppression in multiple reflection of external light, it ispreferred that the inter-pixel light-shielding part 111 is made from aresin material.

As illustrated in FIG. 1, an overcoat film 11 m is provided so as tooverlap surfaces of the color filters 11 k and the inter-pixellight-shielding parts 111 on an inner sides thereof. The overcoat film11 m is flat almost all over the inner side surface of the CF substrate11 a. A counter electrode 11 n is superimposed on an inner surface ofthe overcoat film 11 m. The counter electrode 11 n is flat almost allover the inner side surface of the CF substrate 11 a. The counterelectrode 11 n is always constant at a reference electric potential.Consequently, when pixel electrodes 11 h connected to the TFTs 11 f arecharged along with the drive of the TFTs 11 f, a potential differenceoccurs among the pixel electrodes 11 h. Then, variation in orientationcondition of the liquid crystal molecule contained in the liquid crystallayer 11 c occurs due to the potential difference between the counterelectrode 11 n and the pixel electrodes 11 g, and accordingly, variationin polarized light condition of the transmitted light occurs. As aresult, a quantity of light transmission of the liquid crystal panel 11is controlled individually for each of the pixel parts PX and apredetermined colored image is to be displayed. On the surface of thecounter electrode 11 n, spacers 11 q are provided for keeping a gapbetween the paired substrate 11 a, 11 b, i.e., a thickness of the liquidcrystal layer 11 c (cell gap). See chain double-dashed lines in FIGS. 2to 4.

Various types of films laminated on the internal surface of the arraysubstrate 11 b will be described. As illustrated in FIGS. 5 and 6, thearray substrate 11 b includes, in this order from a lower layer (glasssubstrate GS) side, a first metal film (first conductive film) 13, agate insulating film (first insulating film) 14, a semi conductor film15, a second metal film (second conductive film) 16, a first interlayerinsulating film (second insulating film) 17, a third metal film, (thirdconductive film) 18, a second interlayer insulating film (thirdinsulating film) 19, and a transparent electrode film (fourth conductivefilm) 20. Note that, in FIGS. 5 and 6, illustration of the alignmentfilm 11 p laminated on a further upper layer side from the transparentelectrode film 20 is omitted.

The first metal film 13 is a single film made from one-type metallicmaterial or a laminated film made from different types of metalmaterials or an alloy. Accordingly, the first metal film 13 hasconductivity and light-blocking property. Moreover, as illustrated inFIGS. 5 and 6, the first metal film 13 forms the gate lines 11 i and thegate electrodes 11 f 1 of the TFTs 11 f. The gate insulating film 14 ismade from an inorganic material such as silicon nitride (SiN_(x)) andsilicon oxide (SiO₂) The gate insulating film 14 keeps insulated betweenthe first metal film 13 on the lower layer side and the semiconductorfilm 15 and the second metal film 16 on the upper layer side. Thesemiconductor film 15 is formed by a thin film with a material of suchas an oxide semiconductor, amorphous silicon and polycrystallinesemiconductor. The semiconductor film 15 forms a channel (semiconductorpart) 11 f 4 configured to be connected to the source electrodes 11 f 2and the drain electrodes 11 f 3 in the TFT 11 f. Similar to the firstmetal film 13, the second metal film 16 is a single film made from aone-type metallic material or a laminated film made from different typesof metal materials or an alloy. Accordingly, the second metal film 16has conductivity and light-blocking property, and forms the source lines11 j and the source electrode 11 f 2 and the drain electrodes 11 f 3 ofthe TFTs 11 f. The interlayer insulating film 17 has a laminatedconfiguration of an organic material and an inorganic material, and hasa film thickness larger than that of a second interlayer insulating film19 mentioned later. The first interlayer insulating film 17 keepsinsulated between the semi conductor film, 15 and the second metal film16 on the lower layer side and the third metal film 18 on the upperlayer side. Similar to the first metal film 13 and the second metal film16, the third metal film 18 is a single film made from a single-layerfilm of one type of metal material or a multilayer film made fromdifferent types of metal materials (e.g., Cu, Al, Mo, Ti) or an alloy.Accordingly, the third metal film 18 has conductivity and light-blockingproperty, and forms a light-shielding part 21 mentioned later again. Thesecond interlayer insulating film 19 is made from an inorganic material,and keeps insulated between the third metal film 18 on the lower layerside and the transparent electrode film 20 on the upper layer side. Thetransparent electrode film 20 is made from a transparent electrodematerial such as an indium tin oxide (ITO), and forms the pixelelectrodes 11 g.

The following describes a configuration of the TFT 11 f in detail. Asillustrated in FIGS. 4 and 5, the TFT 11 f includes the gate electrode11 f 1 formed as a part of the gate line 11 i. The gate electrode 11 f 1is formed by a gate electrode body 11 f 1 a, and an extended part 11 f 1b. The gate electrode body 11 f 1 a is composed of a portion of the gateline that intersects the source line a portion adjacent thereto. Theextended part 11 f 1 b is formed by extending the gate electrode body 11f 1 a toward the pixel electrode 11 g (upwardly FIG. 4) as a connectiontarget in the Y-axis direction. The gate electrode 11 f 1 issubstantially square in plan view. The gate electrode 11 f 1 has bothends in the X-axis direction that are superimposed on the sourceelectrode 11 f 2 and the drain electrode 11 f 3 in plan view. The gateelectrode 11 f 1 drives the TFT 11 f in accordance with scanning signalssupplied to the gate line 11 i to control current between the sourceelectrode 11 f 2 and the drain electrode 11 f 3, which is to bementioned later.

As illustrated in FIGS. 4 and 5, the TFT 11 t includes the sourceelectrode 1112 formed as a part of the source line 11 j and superimposedon the gate electrode 11 f 1. The source electrode 11 f 2 is formed by asource electrode body 11 f 2 a as a part of the source line 11 j . Ifcertain pattern deviation occurs at openings 24 or the pixel electrode11 g, an extended part 11 f 2 b formed by an extended part extendingfrom the source line 11 j toward the drain electrode 11 f 3 in theX-axis direction (rightward in FIG. 4) ensures suppression with respectto the opening 24 mentioned later in application of the light to thechannel 11 f 4, and prevent leak of light. The source electrode body 11f 2 a is superimposed on the channel 11 f 4 in plan view to be connectedto the channel 11 f 4, which is to be mentioned later. In contrast tothis, the extended part. 11 f 2 b is not superimposed on the channel 11f 4 in plan view, but is superimposed on the end of the extended part 11f that forms the gate electrode 11 f 1.

As illustrated in FIGS. 4 and 5, the TFT 11 f includes the drainelectrode 11 f 3 between the source electrodes 11 f 2 so as to be aparttherefrom. The drain electrode 11 f 3 is formed by a first drainelectrode component (channel connector) 11 f 3 a connected to a major ofthe channel 11 f 4 and superimposed on the channel 11 f 4 in plan view,and a second drain electrode component (pixel electrode connector) 11 f3 b not superimposed on the channel 11 f 4 and connected to the pixelelectrode 11 g in plan view. The first drain electrode component 11 f 3a has a dimension in the Y-axis direction larger than the channel 1 f 4and smaller than the gate electrode 11 f 1, and is sandwiched betweenends of the gate electrode 11 f 1 in the Y-axis direction. The seconddrain electrode component 11 f 3 b is shifted from the first drainelectrode component 11 f 3 a opposite to the gate line 11 i in theY-axis direction. At substantially the center port on of the seconddrain electrode component 11 f 3 b, contact holes 17CH, 18CH, 19CH arearranged through which a first interlayer insulating film 17, the thirdmetal film 18, and the second interlayer insulating film 19 pass,respectively. In contrast to this, the pixel electrode 11 g is formed bya first pixel electrode component (pixel electrode body) high notsuperimposed on the TFT 11 f in plan view, and a second pixel electrodecomponent 11 g 2 superimposed on at least a part of the TFT 11 f in planview. A major of the first pixel electrode component 11 g 1 is disposedat a pixel opening region of the CF substrate 11 a divided by theinter-pixel light-shielding part 111. Accordingly, the first pixelelectrode component 11 g 1 mainly serves display function. A part of thesecond pixel electrode component 11 g 2 is superimposed on the seconddrain electrode component 11 f 3 b in plan view. The superimposedportion is connected to the second drain electrode component 11 f 3 bvia the contact holes 17CH, 18CH, 19CH described above.

As illustrated in FIGS. 4 and 5, the TFT 11 f includes a channel 11 f 4composed of the semiconductor film 15. The channel 11 f 4 issuperimposed on the gate electrode 11 f 1 via the gate insulating film13, and is connected to the source electrode 11 f 2 and the drainelectrode 11 f 3. The channel 11 f 4 also including a channel connectoris horizontally rectangular in plan view. The channel 11 f 4 has bothends in a long side direction (X-axis direction) that are connected tothe source electrode 11 f 2 and the drain electrode 11 f 3. The channel11 f 4 has a short side (width, dimension in the Y-axis direction)smaller than the dimension of the source electrode 11 f 2 and the drainelectrode 11 f 3 in the Y-axis direction. The channel 11 f 4 issandwiched between both ends of the first drain electrode component 11 f3 a in the Y-axis direction. If the TFT 11 f turns to be an ON state inresponse to a scanning signal supplied to the gate electrode 11 f 1, animage signal (current) supplied to the source line 11 j is supplied fromthe source electrode 11 f 2 to the drain electrode 11 f 3 via thechannel 11 f 4 made from the semiconductor material. As a result, thepixel electrode 11 g is charged.

Now, as illustrated in FIGS. 4 to 6, the array substrate 11 b includes alight-shielding part 21 formed from the third metal film 18. In FIG. 4,a region where the light-shielding part 21 is formed is illustrated withshading. The light-shielding part 21 includes at least a firstlight-shielding section 22 and a second light-shielding section 23. Thefirst light-shielding section 22 is superimposed on the channel 11 f 4,which forms the TFT 11 f, in plan view. The second light-shieldingsection 23 is not superimposed on the gate electrode 11 f 1, the sourceelectrode 11 f 2, and the drain electrode 11 f 3, which form the TFT 11f, in plan view. Also, the light-shielding part 21 includes a portionconfigured not to be superimposed on the channel 11 f 4 in plan view butto be superimposed on the gate electrode 11 f 1, the source electrode 11f 2, and the drain electrode 11 f 3 in plan view (including an extendedlight-shielding part 28 which will be mentioned later). The firstlight-shielding section 22 that forms the light-shielding part 21 canshield the external light (including ambient light external of theliquid crystal display device 10) provided from the upper layer side(opposite to the back light device 12) with respect to the channel 11 f4 made from the semiconductor material. This enables suppressedapplication of the light to the channel 11 f 4. Here, if external light(including light from the back light device 12) is applied from thelower layer side (adjacent to the back light device 12) with respect tothe gate electrode 11 f 1, the source electrode 11 f 2, and the drainelectrode 11 f 3, and external light that is incapable of being shieldedby the gate electrode 11 f 1, the source electrode 11 f 2, and the drainelectrode 11 f 3 is reflected by the first light-shielding section 22,reflected light may be directly applied to the channel 11 f 4 or thereflected light may be mill timely reflected between the gate electrode11 f 1 and the first light-shielding section 22, leading to applicationof the light to the channel 11 f 4.

With regard to this, as illustrated in FIGS. 5 and 6, the secondlight-shielding section 23 that forms the light-shielding part 21includes the opening 24 adjacent to the TFT 11 f. Accordingly, theexternal light applied from the lower layer side with respect to thegate electrode 11 f 1, the source electrode 11 f 2, and the drainelectrode 11 f 3 and is not shielded with the gate electrode 11 f 1, thesource electrode 11 f 2, and the drain electrode 11 f 3 is unlikely topass through the opening 24 of the second light-shielding section 23,leading to more difficulty in contact of the light to the firstlight-shielding section 22 from the lower layer side. This causesdifficulty in generation of the light reflected from the firstlight-shielding section 22, leading to suppressed application of thelight to the channel 11 f 4. From, the above, a variation in property ofthe TFT 11 f in association with application of the light to the channel11 f 4, especially a leak current that may be generated in the TFT 11 fin an off state can be decreased. Consequently, satisfied displayquality of the liquid crystal panel 11 and the liquid crystal displaydevice 10 is obtainable.

The following describes in detail a positional relationship between thelight-shielding part 21 and the TFT 11 f. Firstly, as illustrated inFIGS. 4 and 5, the gate electrode 11 f 1 that forms the TFT 11 fincludes a first gate electrode component 25 where the source electrode11 f 2 and the drain electrode 11 f 3 are superimposed in plan view, anda second gate electrode component 26 where the source electrode 11 f 2and the drain electrode 11 f 3 are not superimposed in plan view. Amongthem, the second gate electrode component 26 is formed by a channelsuperimposed part (semiconductor superimposed part) 26 a superimposed onthe channel 11 f 4 in plan view, and channel non-superimposed portions(semiconductor non-superimposed portion) 26 b not superimposed on thechannel 11 f 4 in plan view, as illustrated in FIGS. 4 and 6. Thechannel non-superimposed portions 26 b are paired so as to sandwich thechannel superimposed part 26 a at both ends thereof in the Y-axisdirection. The openings 24 of the second light-shielding section 23 aredisposed adjacent to the second gate electrode component 26.Specifically, the second light-shielding section 23 includes the pairedopenings 24 each adjacent to the paired channel non-superimposedportions 26 b in the Y-axis direction that for the second gate electrodecomponent 26. With such a configuration, as illustrated in FIG. 5, ifthe external light applied around the first gate electrode component 25of the gate electrode 11 f 1 from the lower layer side is reflected onthe first light-shielding section 22, the light reflected is likely tobe applied to the source electrode 11 f 2 and the drain electrode 11 f 3on the upper layer side of the channel 11 f 4, whereas the lightreflected is unlikely to be applied to the channel 11 f 4 directly. Incontrast to this, as illustrated in FIG. 6, if the external lightapplied around the second gate electrode component 26 of the gateelectrode 11 f 1 from the lower layer side is reflected on the firstlight-shielding section 22, light reflected may possibly contact aregion on the upper layer side of the channel 11 f 4 where neither thesource electrode 11 f 2 nor the drain electrode 11 f 3 is arranged. Incontrast to this, since the openings 24 of the second light-shieldingsection 23 are disposed adjacent to the second gate electrode component26, the external light reflected around the second gate electrodecomponent 26 from the lower layer side is likely to pass through theopenings 24 of the second light-shielding section 23, and thus is likelyto be reflected on the first light-shielding section 22. This enablesmore suppressed application of the light to the channel 11 f 4.

As illustrated in FIGS. 4 and 6, the light-shielding part 21 includes anextended opening 27 in at least a part of a region superimposed on thesecond gate electrode component 26 in plan view, the region being incommunication with the openings 24. Specifically, paired extendedopenings 27 are disposed so as to be superimposed on a part of thepaired. channel non-superimposed components 26 b (especially, endsopposite to the channel superimposed part 26 a) that form the secondgate electrode component 26 in plan view, respectively, and to be incommunication with the paired openings 24. With such a configuration,the external light applied adjacent to the second gate electrodecomponents 26 from the lower layer side passes through the openings 24of the second light-shielding section 23 and the extended openings 27 incommunication therewith. This causes more difficulty in reflection on ofthe external light on the first light-shielding section 22. This enablesmore suppressed application of the light to the channel 11 f 4.

As illustrated in FIGS. 4 and 6, the light-shielding part 21 includesthe extended light-shielding parts 28 that are not superimposed on thechannel 11 f 4 but are superimposed on the gate electrode 11 f 1 in planview, and are connected to the first light-shielding section 22.Specifically, the extended light-shielding parts 28 are paired such thatthe first light-shielding section 22 superimposed on the channel 11 f 4in plan view extends toward the both ends thereof in the Y-axisdirection. The paired extended light-shielding parts 28 are disposed soas to be superimposed on a part of the paired channel non-superimposedcomponents 26 b (especially, a part adjacent to the channel superimposedpart 26 a) of the gate electrode 11 f 1 in plan view. With such aconfiguration, the extended light-shielding part 28 connected to thefirst light-shielding section 22 allows more suitable shielding of theexternal light applied to the channel 11 f 4 from the upper layer side,leading to more suppressed application of light to the channel 11 f 4.

The following describes in detail a positional relationship between thelight-shielding part 21 and the pixel electrode 11 g. As illustrated inFIGS. 2 and 4, the light-shielding part 21 includes a pixellight-shielding portion 29 that is opened such that the secondlight-shielding section 23 surrounds the first pixel electrode component11 g 1 that forms the pixel electrode 11 g. The pixel light-shieldingportion 29 includes a pixel opening 30 at a region of the first pixelelectrode component The region is substantially rectangular in alongitudinal direction, and is apart from the TFT 11 f in the Y-axisdirection. The pixel opening is superimposed on a major of the region.The pixel light-shielding portion 29 shields external light emitted fromthe lower layer side, whereas the pixel opening 30 transmits theexternal light toward the first pixel electrode component 11 g 1 toprovide display. Moreover, as illustrated in FIGS. 4 to 6, the pixelelectrode 11 g is arranged such that the second pixel electrodecomponent 11 g 2 is partially superimposed on at least a part of thefirst light-shielding section 22. Moreover, the light-shielding part 21is configured to be connected to lines where a constant electricpotential is applied (e.g., lines to supply signals to the counterelectrode 11 n) in the non-active area. With such a configuration, sinceThe pixel electrode 11 g is partially superimposed on at least a part ofthe first light-shielding section 22 of the light-shielding part 21formed by the third metal film 18 as the conductive material, anelectrostatic capacity is formed between the pixel electrode 11 g andthe light-shielding part 21. Accordingly, such a state is suitable forkeeping voltage charged in the pixel electrode 11 g. This allowsprevention of visible defects such as lowered contrast and displayunevenness. Moreover, the light-shielding part 21 achieves electricfield shielding between gate line 11 i connected to the gate electrode11 f 1 or the source line 11 j connected to the source electrode 11 f 2and the pixel electrode 11 g. This leads to difficulty in formation ofparasitic capacitance between the lines (containing the gate line 11 iand the source line 11 j) by the pixel electrode, and also prevention ofdisturbed orientation of the liquid crystal molecules such as reversetilt. Moreover, as illustrated in FIG. 1, the pixel light-shieldingportion 29 is partially superimposed on the outer edge of the firstpixel electrode component 11 g 1 that forms the pixel electrode 11 g.With such a configuration, an electrostatic capacity becomes largerbetween the pixel electrode 11 g and the light-shielding part 21, whichis suitable for maintaining the voltage charged in the pixel electrode11 g.

As illustrated in FIGS. 4 and 6, the pixel electrode 11 g includes anopening superimposed part 31 that is disposed such that the second pixelelectrode component 11 g 2 is superimposed on the opening 24 of thesecond light-shielding section 23. The opening superimposed part 31 is apart of the pixel electrode 11 g. Accordingly, the opening superimposedpart 31 transmits light through the opening 24 toward the upper layerside, and thus is unlikely to reflect light toward the lower layer side.With such a configuration, an electric field is obtainable at theopening 24 of the second light-shielding section 23 in accordance withthe voltage charged in the pixel electrode 11 g including the openingsuperimposed part 31. This prevents disturbed orientation of the liquidcrystal molecule such as the reverse tilt.

As illustrated in FIGS. 4 and 6, the gate electrode 11 f 1 that formsthe TFT 11 f includes paired ends 26 b 1 of the paired channelnon-superimposed portion 26 b opposite to the channel superimposed part26 a, the paired ends 26 b 1 not superimposed on the source electrode 11f 2 and the drain electrode 11 f 3. In contrast to this, thelight-shielding part 21 includes the paired openings 24 disposedadjacent to the paired ends 26 b 1 of the second light-shieldingsections 23 individually. Moreover, as illustrated in FIG. 4, thelight-shielding part 21 includes paired pixel light-shielding portions29 such that the second light-shielding sections 23 surround the pairedpixel electrodes 11 g. One of the paired openings 24 is in communicationwith the contact hole 18CH of the third metal film 18, whereas the otherof the paired openings 24 is in communication with the pixel opening 30of the pixel light-shielding portion 29. The opening 24 in communicationwith the contact hole 18CH is disposed adjacent to the pixel electrode11 g to be connected to the channel 11 f 4 in the Y-axis direction. Theopening 24 in communication with the pixel opening 30 is disposedadjacent to the pixel electrode 11 g not to be connected to the channel11 f 4 in the Y-axis direction. As described above, one of the openings24 is in communication with the contact hole 18CH, and the other of theopenings 24 is in communication with the pixel opening 30. This obtainsthe enlarged open range of the light-shielding part 21, leading to easypatterning of the light-shielding part 21.

Moreover, as illustrated in FIGS. 4 and 6, at least the paired pixelelectrodes 11 g are arranged so as to be disposed adjacent to the pairedopenings 24 in the second light-shielding section 23 opposite to theside of the channel 11 f 4. The paired pixel electrodes 11 g eachinclude the opening superimposed part 31 in the second pixel electrodecomponent 11 g 2 configured to be superimposed on the paired openings 24of the second light-shielding section 23. With such a configuration, apart of the gate electrode 11 f 1 adjacent to the paired ends 26 b 1corresponds to the openings 24. Accordingly, the external light appliedto the gate electrode 11 f 1 from the lower layer side and is notshielded with the gate electrode 11 f 1 is unlikely to pass through thepaired openings 24 of the second light-shielding section 23, leading tomore difficulty in application to the first light-shielding section 22from the lower layer side. In addition, the opening superimposed part 31of the second pixel electrode component 11 g 2 that forms the pairedpixel electrodes 11 g is superimposed on the paired openings 24 in thesecond light-shielding section 23. Accordingly, the electric field basedon the voltage charged in the paired pixel electrodes 11 g achievesprevention of disturbed orientation of the liquid crystal molecules suchas reverse tilt. In addition, light passing through the paired openings24 of the second light-shielding section 23 is available effectively.

As described above, the embodiment of the present invention includes thearray substrate thin-film(transistor substrate) lib including the TFT(thin-film transistor) 11 f having at least the gate electrode lift, thechannel (semiconductor part) 11 f 4, the source electrode 11 f 2, andthe drain electrode 11 f 3, and a light-shielding part 21 having atleast a first light-shielding section 22 and a second light-shieldingsection 23. The channel 11 f is made from the semiconductor material andis configured to be superimposed on at least a part of the gateelectrode 11 f 1 via the gate insulating film (first insulating film) 14on an upper layer side. The source electrode 11 f 2 is disposed on atleast a part of the channel 11 f 4 on the upper layer side and connectedto the channel 11 f 4. The drain electrode 11 f 3 is disposed on at apart of the channel 11 f 4 on the upper layer side and connected to thechannel while being spaced apart from the source electrode 11 f 2. Thelight-shielding part 21 is disposed on the channel 11 f 4, the sourceelectrode 11 f 2, and the drain electrode 11 f 3 via the firstinterlayer insulating film (second insulating film) 17 on the upperlayer side. The light-shielding part 21 includes the firstlight-shielding section 22 configured to be superimposed on the channel11 f 4, and the second light-shielding section 23 configured not to besuperimposed on the gate electrode 11 f 1, the source electrode 11 f 2,and the drain electrode 11 f 3, and has the openings 24 adjacent to theTFT 11 f.

With such a configuration as above, if a signal is applied to the gateelectrode 11 f 1 and the source electrode 11 f 2 individually that formthe TFT 11 f, current flows between the source electrode 11 f 2 and thedrain electrode 11 f 3 via the channel 11 f 4 made from thesemiconductor material. The light-shielding part 21 includes the firstlight-shielding section. 22 that is disposed on the upper layer sidewith respect to the channel 11 f 4 via the first interlayer insulatingfilm 17 and is superimposed on the channel 11 f 4. The firstlight-shielding section 22 allows shielding of external light appliedfrom the upper layer side to the channel 11 f 4 made from thesemiconductor material, leading to suppressed application of light tothe channel 11 f 4 . In contrast to this, if external light is appliedfrom the lower layer side with respect to the gate electrode 11 f 1, thesource electrode 11 f 2, and the drain electrode 11 f 3, it is assumedthat external light that is incapable of being shielded by the gateelectrode 11 f 1, the source electrode 11 f 2, and the drain electrode11 f 3 is reflected by the first light-shielding section 22. Under suchan assumption, reflected light may be directly applied to the channel 11f 4 . Alternatively, the reflected light may be multiply reflectedbetween the gate electrode 11 f 1 and the first light-shielding section22, leading to application of the light to the channel 11 f 4. Withregard to this, the light-shielding part 21 includes the secondlight-shielding section 23 not superimposed on the gate electrode 11 f1, the source electrode 11 f 2, and the drain electrode 11 f 3, and thesecond light-shielding section includes the openings adjacent to the TFT11 f. Accordingly, the external light applied from the lower layer sidewith respect to the gate electrode 11 f 1, the source electrode 11 f 2,and the drain electrode 11 f 3 and not shielded by the gate electrode 11f 1, the source electrode 11 f 2, and the drain electrode 11 f 3 islikely to pass through the openings 24 of the second light-shieldingsection 23 easily, and is unlikely to apply the first light-shieldingsection 22 from the lower layer side. This causes difficulty ingeneration of the light reflected from the first light-shielding section22, leading to suppressed application of the light to the channel 11 f4. From the above, a variation in property of the TFT 11 f inassociation with application of the light to the channel 11 f 4,especially a leak current that may be generated in the TFT 11 f in anoff state can be decreased.

Moreover, the gate electrode 11 f 1 includes the first gate electrodecomponent 25 where the source electrode 11 f 2 and the drain electrode11 f 3 are superimposed, and the second gate electrode component 26where the source electrode 11 f 2 and the drain electrode 11 f 3 are notsuperimposed. The second light-shielding section 23 includes theopenings 24 arranged adjacent to the second gate electrode component 26.With such a configuration, if the first light-shielding section 22reflects the external light emitted adjacent to the first gate electrodecomponent 25 of the gate electrode 11 f 1 from the lower layer side, thelight reflected is likely to be applied to the source electrode 11 f 2and the drain electrode 11 f 3 on the upper layer side with respect tothe channel 11 f 4, whereas the I light reflected is unlikely to beapplied to the channel 11 f 4 directly. In contrast to this, if externallight applied from the lower layer side adjacent to the second gateelectrode component 26 of the gate electrode 11 f 1 is reflected on thefirst light shielding section 22, light reflected may possibly contact aregion of the channel 11 f 4 on the upper layer side where neither thesource electrode 11 f 2 nor the drain electrode 11 f 3 is arranged. Incontrast to this, since the openings 24 of the second light-shieldingsection 23 are disposed adjacent to the second gate electrode component26, the external light reflected around the second gate electrodecomponent 26 from the lower layer side is likely to pass through theopenings 24 of the second light-shielding section 23, and thus is likelyto be reflected on the first light-shielding section 22. This enablesmore suppressed application of the light to the channel 11 f 4.

The light-shielding part 21 includes the extended opening 27 in at leasta part of a region superimposed on the second gate electrode component26, the extended openings being in communication with the openings 24.With such a configuration, the external light applied adjacent to thesecond gate electrode components 26 from the lower layer side passesthrough the openings 24 of the second light-shielding section 23 and theextended openings 2 in communication therewith. This causes moredifficulty in reflection of the external light on the firstlight-shielding section 22. This enables more suppressed application ofthe light to the channel 11 f 4.

The light-shielding part 21 includes the extended light-shielding part28 configured not to be superimposed o. the channel 11 f 4 but issuperimposed on the gate electrode 11 f 1, and is connected to the firstlight-shielding section 22. With such a configuration, the extendedlight-shielding part 28 connected to the first light-shielding section22 allows more suitable shielding of the external light applied to thechannel 11 f 4 from the upper layer side, leading to more suppressedapplication of light to the channel 11 f 4.

Moreover, the pixel electrode 11 g is disposed on the light-shieldingpart 21 via the third insulating film on the upper layer side and isconfigured to be connected the drain electrode 11 f 3. The pixelelectrode 11 g includes at least the first pixel electrode component 11g 1 not superimposed on the TFT 11 f, and the second pixel electrodecomponent 11 g 2 superimposed on at least a part of the TFT 11 f. Thelight-shielding part 21 includes the pixel light-shielding portion 29with the openings 24 such that the second light-shielding section 23surrounds the first pixel electrode component 11 g 1 and is made fromthe conductive material. The pixel electrode is arranged such that thesecond pixel electrode component 11 g 2 is partially superimposed on atleast a part of the first light-shielding section 22. With such aconfiguration as above, the pixel electrode 11 g is charged in responseto flow of a current between the source electrode 11 f 2 and the drainelectrode 11 f 3 via the channel 11 f 4. Since the light-shielding part21 includes the pixel light-shielding portion 29 with the openings 24such that the second light-shielding section 23 surrounds the firstpixel electrode component 11 g 1, light passing through the openings 24is able to be deflected toward the pixel electrode 11 g. The pixelelectrode 11 g disposed on the light-shielding part 21 via the thirdinsulating film, on the upper layer side includes the second pixelelectrode component 11 g 2 a part of which is superimposed on at least apart of the first light-shielding section 22 of the light-shielding part21 made from the conductive material. This forms electrostatic capacitybetween the pixel electrode 11 g and the first light-shielding section22. This is suitable for maintaining the voltage charged in the pixelelectrode 11 g. Moreover, the light-shielding part 21 achieves shieldingof the electric field of the pixel electrode 11 g to make difficulty information of parasitic capacitance by the pixel electrode 11 g. Inaddition, the light-shielding part 21 allows prevention of disturbedorientation of the liquid crystal molecules such as reverse tilt.

Moreover, the pixel electrode 11 g includes the opening superimposedpart 31 that is disposed such that the second pixel electrode component11 g 2 is superimposed on the opening 24 of the second light-shieldingsection 23. With such a configuration, since the second pixel electrodecomponent 11 g 2 of the pixel electrode 11 g includes the openingsuperimposed part 31 superimposed on the opening 24 of the secondlight-shielding section 23, the electric field based on the voltagecharged in the pixel electrode 11 g containing the opening superimposedpart 31 is obtainable to prevent the disturbed orientation such as thereverse tilt of the liquid crystal molecules.

Moreover, the gate electrode 11 f 1 includes the paired ends 26 b 1 thatform opposite sides. The paired ends 26 b 1 are not superimposed on thesource electrode 11 f 2 and the drain electrode 11 f 3, whereas thelight-shielding part 21 includes the paired openings 24 in such a mannerthat the second light-shielding section 23 is arranged adjacent to thepaired ends 26 b 1. The pixel electrodes 11 g are formed at least inpair so as to be arranged opposite to the channel 11 f 4 with respect tothe paired openings 24 in the second light-shielding section 23. Thepixel electrodes 11 g formed in pair are arranged such that the openingsuperimposed part 31 of the second pixel electrode components 11 g 2 aresuperimposed on the paired openings 24 of the second light-shieldingsection 23. With such a configuration, a part of the gate electrode 11 f1 adjacent to the paired ends 26 b 1 corresponds to the openings 24.Accordingly, the external light applied to the gate electrode from 11 f1 the lower layer side and is not shielded with the gate electrode 11 f1 is unlikely to pass through the paired openings 24 of the secondlight-shielding section 23, leading to more difficulty in emission tothe first light-shielding section 22 from the lower layer side. Inaddition, the opening superimposed part 31 of the second pixel electrodecomponent 11 g 2 that forms the paired pixel electrodes 11 a issuperimposed on the paired openings 24 in the second light-shieldingsection 23. Accordingly, the electric field based on the voltage chargedin the paired pixel electrodes 11 g achieves prevention of disturbedorientation of the liquid crystal molecules such as reverse tilt. Inaddition, light passing through the paired openings 24 of the secondlight-shielding section 23 is available effectively.

Moreover, the light-shielding part 21 includes the secondlight-shielding section 23 having at least the paired pixellight-shielding portions 29, and at least one of the paired openings 24in the second light-shielding section 23 is in communication with one ofthe paired pixel openings 30 of the pixel light-shielding portions 29adjacent thereto. Such a configuration obtains an enlarged open range ofthe light-shielding part 21, leading to easy patterning of thelight-shielding part 21.

Moreover, the pixel light-shielding portion 29 of the light-shieldingpart 21 is partially superimposed on the outer edge of the pixelelectrode 11 g. With such a configuration, an electrostatic capacitybecomes larger between the pixel electrode 11 g and the light-shieldingpart 21, which is suitable for maintaining the voltage charged in thepixel electrode 11 g.

Moreover, the pixel electrode 11 g configured to be connected to thedrain electrode 11 f 3 via the contact holes 17CH to 19CH and isdisposed on the light-shielding part 21 via the second interlayerinsulating film (third insulating film) 19 on the upper layer side. Thecontact holes 17CH to 19CH have the openings 24 where the firstinterlayer insulating film 17, the light-shielding part 21, and thesecond interlayer insulating film 19 are superimposed on the drainelectrode aaf3 partially. The openings 24 of the light-shielding part 21are in communication with the contact holes 17CH to 19CH. Such aconfiguration obtains an enlarged open range of the light-shielding part21, leading to easy patterning of the light-shielding part 21.

Moreover, the liquid crystal panel (display panel) 11 according to thefirst embodiment of the present invention includes the array substrate11 b above, and the CF substrate (opposite substrate) 11 a whose platesurface is faced to a plate surface of the array substrate 11 b. Withthe liquid crystal panel 11 configured in such a manner as above,variation in property of the TFT 11 f is suppressed, achieving satisfieddisplay quality.

The liquid crystal display device (display device) 10 according to thefirst embodiment of the present invention the liquid crystal displaypanel 11 described above, and a back light device (lighting device) 12configured to be faced to the array substrate 11 b across the CFsubstrate 11 a, and apply light to the liquid crystal panel 11. With theliquid crystal display device 10 configured in such a manner as above,when the light from the back light device 12 is applied to the arraysubstrate 11 b, the light is applied from the lower layer side withrespect to the light-shielding part 21 of the array substrate 11 b, butthe light is transmitted through the openings 24 of the secondlight-shielding section 23. Accordingly, the light is unlikely to beapplied to the first light-shielding section 22 from the lower layerside. This causes difficulty in generation of the light reflected fromthe first light-shielding section 22, leading to suppressed lightirradiation to the charnel 11 f 4. Accordingly, variation in property ofthe TFT 11 f 1 is suppressed. Consequently, satisfied display quality isobtainable.

Second Embodiment

A second embodiment of the present invention will be described withreference to FIGS. 7 to 9. In the second embodiment, a liquid crystalpanel 111 turns a VA mode. Here, the description of the configurationand operational advantage common to that of the first embodiment is tobe omitted.

The liquid crystal panel 111 according to this embodiment operates inthe vertical alignment (VA) mode, more specifically a continuouspinwheel alignment (CPA) mode. As illustrated in FIGS. 7 and 8, a CFsubstrate 111 a and an array substrate 111 b have innermost facescontacting a liquid crystal layer 111 c. On the innermost face,alignment films 111 o, 111 p are formed, respectively, for orientationof liquid crystal molecules (here, made using a liquid crystal materialwith negative dielectric anisotropic) contained n the qui d crystallayer 111 c. These alignment films 111 o, 111 p are vertical alignmentfilm that deflects major axes of the liquid crystal molecules to anormal line with respect to the substrate. Moreover, openings 32 aredisposed in an opposite electrode 111 n of the CF substrate 111 a forcontrolling orientation of the liquid crystal molecules. An electricfield generated between the openings 32 and edges of a pixel electrode111 g (electric field deflected toward the normal line of the substrate)can make different orientation directions of the liquid crystalmolecules radially and continuously. The openings 32 are disposedsubstantially the center of a pixel opening 130 that surrounds the pixelelectrode 111 g. FIG. 8 illustrates the openings 32 by chaindouble-dashed lines. Moreover, the liquid crystal panel 111 is in anormally black mode in which the liquid crystal panel 111 is displayedin black when no voltage is applied to the liquid crystal layer 111 cand light transmittance becomes minimum.

Also in this embodiment, as illustrated in FIG. 9, an openingsuperimposed part 131 of a second pixel electrode component 111 g 2 inthe pixel electrode 111 g is superimposed on an opening 124 of alight-shielding part 121 in plan view. Accordingly, the electric fieldbased on the voltage charged in the pixel electrode 111 g preventsdisturbed orientation of the liquid crystal molecules in the liquidcrystal layer 111 c present around the opening 124. As a result, thisprevents leakage of light and suppresses a lowered response speed.Moreover, the pixel electrode 111 g of this embodiment differs from thatof the first embodiment in its planar shape. For instance, the pixelelectrode 111 g of this embodiment includes corners with oblique cut-offportions. Now, instead of the opening 32, a substantially circularprojection made from a resin material may be used for controllingorientation.

Third Embodiment

A third embodiment of the present invention will be described withreference to FIGS. 10 to 12. In the third embodiment, a common electrode33 is added to the configuration of the first embodiment. Here, thedescription of the configuration and operational advantage common tothat of the first embodiment is to be omitted.

Now, as illustrated in FIGS. 10 to 11, an array substrate 211 b of thisembodiment includes the common electrode 33. The common electrode 33 isformed by a second transparent electrode film 34 that is disposedbetween a first interlayer insulating film 217 and a third metal film218 that forms a light-shielding part 221. The second transparentelectrode film 34 is made from a transparent electrode material similarto a transparent electrode film 220 that forms the pixel electrode 211g. The second transparent electrode film 34 (common electrode 33) iscontacted directly to a lower layer of the third metal film 218(light-shielding part 221) to be connected electrically to the thirdmetal film 218 (light-shielding part 221). The common electrode 33 isarranged in a flat shape within an active area of the array substrate211 b, and includes openings 35 that are superimposed on contact holes217CH to 219CH in plan view. As described above, an electrostaticcapacity is generated between the common electrode 33 and a first pixelelectrode component 211 g 1 of the pixel electrode 211 g superimposed onthe common electrode 33 via the second interlayer insulating film (thirdinsulating film) 219. This achieves maintained voltage charged in thepixel electrode 211 g. In addition, the common electrode 33 is connectedto the light-shielding part 221 made from the conductive material. Thisis more suitable for keeping the maintained voltage in the pixelelectrode 211 g.

Moreover, as illustrated in FIGS. 10 and 12, the common electrode 33includes a common electrode-side opened superimposed part 36 configuredto be superimposed on an opening 224 of the light-shielding part 221 andan opening superimposed part 231 of the pixel electrode 211 g in planview. With such a configuration, the common electrode-side openedsuperimposed part 36 is superimposed on the opening superimposed part231 in plan view, whereby an electrostatic capacity is generated betweenthe pixel electrode 211 g and the common electrode 33 at the opening 224where no light-shielding part 221 is formed. This is more suitable formaintaining the voltage charged in the pixel electrode 211 g. Moreover,the common electrode-side opened superimposed part 36 achieves electricfield shielding of the pixel electrode 211 g in the opening 224 of thelight-shielding part 221. This leads to difficulty in formation ofparasitic capacitance by the pixel electrode 211 g between other lines(containing gate lines 211 i and source lines 211 j)

According to this embodiment described above, the common electrode 33 isprovided between the light-shielding part 221 and the first interlayerinsulating film 217, and is superimposed on at least the first pixelelectrode component 211 g 1 of the pixel electrode 211 g. The commonelectrode 33 includes the common electrode-side opened superimposed part36 configured to be superimposed on the opening superimposed part 231.With such a configuration, the electrostatic capacity is generatedbetween the first pixel electrode component 211 g 1 and the commonelectrode 33 of the pixel electrode 211 g adjacent to each other via thefirst interlayer insulating film 217, achieving the maintained voltagecharged in the pixel electrode 211 g. The common electrode 33 includesthe common electrode-side opened superimposed part 36 configured to besuperimposed on the opening superimposed part 31 of a second pixelelectrode component 211 g 2 that forms the pixel electrode 211 g.Accordingly, the electrostatic capacity is generated between the pixelelectrode 211 g and the common electrode 33 at the opening 224 where nolight-shielding part 221 is formed. This is more suitable formaintaining the voltage charged in the pixel electrode 211 g. Moreover,the common electrode-side opened superimposed part 36 achieves electricfield shielding; of the pixel electrode 211 g at the opening 224 of thelight-shielding part 221, leading to easy formation of parasiticcapacitance by the pixel electrode 211 g.

Other Embodiments

The present invention is not limited to the embodiments described abovewith the description and the drawings. Such embodiments as under arecontained in the technical scope of the present invention.

(1) in each of the embodiments described above, the extended opening isformed so as to be in communication with the opening of thelight-shielding part. The detailed formation area and the planar shapeof the extended opening are variable appropriately. Alternatively, theextended opening is omittable.

(2) Another arrangement, another planar shape and another formation areaof the opening and the extended opening are variable appropriately so asto be different from those in the embodiments described above.

(3) In each of the embodiments described above, the paired openings ofthe light-shielding part are arranged across the channel in the Y axisdirection. Alternatively, one of the paired openings is omittable.

(4) In each of the embodiments described above, the light-shielding partincludes the extended light-shielding part. The detailed formation areaand the planar shape of the extended light-shielding part are variableappropriately. Alternatively, the extended light-shielding part isomittable.

(5) In each of the embodiments described above, the pixel electrodeincludes the opening superimposed part. The detailed area of the openingsuperimposed part configured to be superimposed on the opening isvariable appropriately. Alternatively, the opening superimposed part isomittable.

(6) In the third embodiment described above, the common electrode isdisposed on the lower layer side with respect to the light-shieldingpart (between the light-shielding part and the first interlayerinsulating film). Alternatively, the common electrode may be disposed onthe light-shielding part (between the light-shielding part and thesecond interlayer insulating film) on the upper layer side.

(7) Except the embodiments described above, the arrangement, the planshape, and the formation area of the gate electrode, the sourceelectrode, the drain electrode, the channel, and the pixel electrode areappropriately variable. If arrangement of the elements as above isvaried, the arrangement of the opening of the light-shielding part maybe varied accordingly.

(8) In the embodiments described above, the column spacers are disposedon the surface of the counter electrode in the CF substrate.Alternatively, spherical spacers may be dispersed within the liquidcrystal layer to keep a gap between the paired substrates. Also, in thiscase, a portion of the inter-pixel light-shielding part in the CFsubstrate that extends in the X-axis direction is selectively omittable.In this case, a portion of the inter-pixel light-shielding part thatextends in the Y-axis direction preferable remains for prevention ofmixed colors among the pixels.

(9) In the embodiments described above, the first interlayer insulatingfilm is made as a laminated structure with the organic material and theinorganic material. Alternatively, the first interlayer insulating filmmay be made from either the organic material or the inorganic materialonly.

(10) In the embodiments described above, the light-shielding part isformed by the third metal film. Alternatively, the light-shielding partmay be made from a light-shielding material except the metallicmaterial.

(11) In the embodiments described above, the liquid crystal panel isoperated in the TN mode or the VA mode. Alternatively, the liquidcrystal panel may be operated in another mode such as a fringe fieldswitching (FFS) mode. In the FFS mode, the counter electrode adjacent tothe CF substrate is removed, and a common electrode for forming anelectric field is disposed adjacent to the array substrate across thepixel electrode.

EXPLANATION OF SYMBOLS

10: liquid crystal display device (display device) 11, 111: liquidcrystal panel (display panel) 11 a, 111 a: CF substrate (oppositesubstrate) 11 b, 111 b, 211 b: array substrate (thin-film transistorsubstrate) 11 f: TFT (thin-film transistor)11 f 1: gate electrode 11 f1: gate electrode 11 f 2: source electrode 11 f 3: drain electrode 11 f4: channel (semiconductor part) 11 g, 111 g, 311 g: pixel electrode 12:back light device (lighting device) 14: gate insulating film (firstinsulating film) 17, 217: first interlayer insulating film (secondinsulating film) 17CH, 217CH: contact hole 18CH, 218CH: contact hole 19,219: second interlayer insulating film (third insulating film) 19CH,219CH: contact hole 21, 121, 221: light-shielding part 22: firstlight-shielding section 23: second light-shielding section 24, 124, 224:opening 25: first gate electrode component 26: second gate electrodecomponent 26 b 1: end 27: extended opening 28: extended light-shieldingpart 29: pixel light-shielding portion 31, 131, 231: openingsuperimposed part 33: common electrode 36: common electrode-side openedsuperimposed part

1. A thin-film transistor substrate, comprising: a thin-film transistorat least including a gate electrode, a semiconductor part being madefrom a semiconductor material and being configured to be superimposed onat least a part of the gate electrode via a first insulating film on anupper layer side, a source electrode being disposed on at least a partof the semiconductor part on an upper layer side and being configured tobe connected to the semiconductor part, and a drain electrode beingdisposed on at least a part of the semiconductor part on an upper layerside and being configured to be connected to the semiconductor partwhile being spaced apart from the source electrode; and alight-shielding part disposed on an upper layer side with respect to thesemiconductor part, the source electrode, and the drain electrode via asecond insulating film, the light-shielding part at least including afirst light-shielding section and a second light-shielding section, thefirst light-shielding section being disposed on an upper layer side withrespect to the semiconductor part, the source electrode, and the drainelectrode via the second insulating film, and being configured to besuperimposed on the semiconductor part, and the second light-shieldingsection being configured not to be superimposed on the gate electrode,the source electrode, and the drain electrode, and having an openingadjacent to the thin-film transistor.
 2. The thin-film transistorsubstrate according to claim 1, wherein the gate electrode includes afirst gate electrode component where the source electrode and the drainelectrode are superimposed, and a second gate electrode component wherethe source electrode and the drain electrode are not superimposed, andthe second light-shielding part includes the opening arranged adjacentto the second gate electrode component.
 3. The thin-film transistorsubstrate according to claim 2, wherein, the light-shielding partincludes an extended opening in at least a part of a region superimposedon the second gate electrode component, the extended opening being incommunication with the opening.
 4. The thin-film transistor substrateaccording to claim 1, wherein the light-shielding part includes anextended light-shielding part configured not to be superimposed on thesemiconductor part but to be superimposed on the gate electrode and tobe connected to the first light-shielding section.
 5. The thin-filmtransistor substrate according to claim 1, further comprising: a pixelelectrode disposed on the light-shielding part via a third insulatingfilm on an upper layer side and configured to be connected to the drainelectrode, wherein the pixel electrode at least includes a first pixelelectrode component that is not superimposed on the thin-filmtransistor, and a second pixel electrode component that is superimposedon at least a part of the thin-film transistor, whereas thelight-shielding part includes a pixel light-shielding portion that isopened such that the second light-shielding section surrounds the firstpixel electrode component and is made from a conductive material, andthe pixel electrode is arranged such that the second pixel electrodecomponent is partially superimposed on at least a part of the firstlight-shielding section.
 6. The thin-film transistor substrate accordingto claim 5, wherein the pixel electrode includes an opening superimposedpart disposed such that the second pixel electrode component issuperimposed on the opening of the second light-shielding section. 7.The thin-film transistor substrate according to claim 6, wherein thegate electrode includes paired ends that form opposite sides, the pairedends being not superimposed on the source electrode and the drainelectrode, whereas the light-shielding part includes paired openings insuch a manner that the second light-shielding section is arrangedadjacent to the paired ends, and the pixel electrodes are disposed atleast in pair so as to be arranged opposite to the semiconductor partwith respect to the paired openings in the second light-shieldingsection, and the pixel electrodes in the pair are arranged such that theopening superimposed part of the second pixel electrode components issuperimposed on the paired openings of the second light-shieldingsection.
 8. The thin-film transistor substrate according to claim 7,wherein the light-shielding part includes the second light-shieldingsection having at least the pixel light-shielding portions in pair, andat least one of the paired openings in the second light-shieldingsection is in communication with one of the paired openings of the pixellight-shielding portions adjacent thereto.
 9. The thin-film transistorsubstrate according to claim 6, further comprising: a common electrodedisposed between the light-shielding part and the third insulating filmor between the light-shielding part and the second insulating film, andconfigured to be superimposed on at least the first pixel electrodecomponent of the pixel electrode, wherein the common electrode includesa common electrode-side configured to be superimposed on the openingsuperimposed part.
 10. The thin-film transistor substrate according toclaim 5, wherein the pixel light-shielding portion of thelight-shielding part is partially superimposed on an outer edge of thepixel electrode.
 11. The thin-film transistor substrate according toclaim 1, further comprising: a pixel electrode configured to beconnected to the drain electrode via contact holes, and disposed on thelight-shielding part via the third insulating film on the upper layerside, the contact holes having openings at a position where the secondinsulating film, the light-shielding part, and the third insulating filmare superimposed on the drain electrode partially, wherein the openingsof the light-shielding parts are in communication with the contactholes.
 12. A display panel, comprising: the thin-film transistorsubstrate according to claim 1; and an opposite substrate whose platesurface is faced to a plate surface of the thin-film transistorsubstrate.
 13. A display device, comprising: the display panel accordingto claim 12; and a lighting device faced to the opposite substratehaving the thin-film transistor substrate therebetween, and configuredto apply light to the display panel.